Силовые IGBTи SiC модули , стр.27 ₁₃₁₉

GD800HFY120C3S, Advanced Trench FS IGBT, Low Loss

GD800HTX65P4S, Trench FS IGBT, Low Loss

GD800SGX170C3S, Trench FS IGBT, Low Loss

GD80TLQ120F1S, Advanced Trench FS Fast IGBT

GD820HTX75P6HB, Trench FS IGBT, Low Loss

GD820HTX75P6HL, Trench FS IGBT, Low Loss PTP FS820R08A6P2LB, TG820FF08S3-S4A21

GD900CLY120P1S, Advanced Trench FS IGBT, Low Loss

GD900CUY120P1S, Advanced Trench FS IGBT, Low Loss

GD900HFA120C6S, 1200V/900A 2 in one-package

GD900HFY120P1S, Advanced Trench FS IGBT, Low Loss

GD900SGU120C3SN, NPT Ultra Fast IGBT

GD900SGU120C3SN, NPT Ultra Fast IGBT (SIC Diode)

GD900SGX120C2SA_B20, 1200V/900A 1 in one-package

GD900TLY120P2S, Advanced Trench FS IGBT, Low Loss

GD950HTX75P6HB, Trench FS IGBT, Low Loss

GD950HTX75P6HLB, Trench FS IGBT, Low Loss

HF13UBA60N12X100, Диодный модуль 1200В 60А

HGS75MG170X100, IGBT дискрет, 1700В, 75А = SK75GB12T4T (SEMIKRON DANFOSS)

J1BCP78042A, IGBT модуль

J1BWJA, IGBT модуль

MBM1000FS17G, IGBT модуль 1700В 1000А

MBN3600E17F, модуль Silicon N-channel IGBT3600A 1700V

MD120HFR120C2S, SiC MOSFET Half Bridge

MD13HTC120P6HE, SiC MOSFET

MD200HFR120C2S, SiC MOSFET Half Bridge

MD22HTC120P6HE, SiC MOSFET

MD29HTC120P6HE, SiC MOSFET

MD300HFC170C2S, SiC MOSFET Half Bridge

MD300HFR120C2S, SiC power MOSFET, Half Bridge, 1200V/300A

MD400HFR120C2S, SiC MOSFET Half Bridge

MG100HF12LEC1, IGBT модуль, 1200B, 100A (C1) = SKM100GB125DN = FF100R12RT4 = 2MBI100VA-120-50

MG100HF12TFC1, IGBT модуль, 1200B, 100A, 441Вт (C1) =GD100HFF120C1S , SKM100GB12T4

MG100HF12TLC1, IGBT модуль, 1200B, 100A, 785Вт (C1) = SKM100GB12T4

MG100P12E2, IGBT модуль, 1200В, 100A (E2) = Infineon FP100R12KT4 = FUJI 7MBR100VN120-50

MG100TF12E2A, IGBT модуль, 1200В, 100А, 446Вт (E2A)

MG10P12E1, IGBT модуль, 1200В, 10А, 120Вт (E1)